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data sheet 600ma cmos ldo regulator with enable ap2112 mar. 2013 rev. 2. 0 bcd semiconductor manufacturing limited 1 general description the ap2112 is cmos process low dropout linear regulator with enable function, the regulator delivers a guaranteed 600ma (min.) continuous load current. the ap2112 provides 1.2v, 1.8v, 2.5v, 2.6v, 2.8v and 3.3v regulated output and 0.8v to 5v adjustable output, and provides excellent output accuracy 1.5%, also provides an excellent load regulation, line regulation and excellent load transient performance due to very fast loop response. the ap2112 has built-in auto discharge function. the regulator features low power consumption, and provides sot-23-5, sot-89-5, and soic-8 packages. features ? output voltage accuracy: 1.5% ? output current: 600ma (min.) ? foldback short current protection: 50ma ? enable function to turn on/off v out ? low dropout voltage (3.3v): 250mv (typ.) @i out =600ma ? excellent load regulation: 0.2%/a (typ.) ? excellent line regulation: 0.02%/v (typ.) ? low quiescent current: 55 a (typ.) ? low standby current: 0.01 a (typ.) ? low output noise: 50 v rms ? psrr: 100hz -65db, 1khz -65db ? otsd protection ? stable with 1.0 f flexible cap: ceramic, tantalum and aluminum electrolytic ? operation temperature range: -40c to 85c ? esd: mm 400v, hbm 4000 v applications ? laptop computer ? portable dvd ? lcd monitor figure 1. package types of ap2112 sot-23-5 sot-89-5 soic-8 (option 1) soic-8 (option 2)
data sheet 600ma cmos ldo regulator with enable ap2112 mar. 2013 rev. 2. 0 bcd semiconductor manufacturing limited 2 pin configuration k package m package sot-23-5 soic-8 r5/r5a package sot-89-5 r5 r5a 1 23 4 5 vout en nc gnd vin figure 2. pin configuration of ap2112 (top view) pin descriptions pin no. name descriptions sot-23-5 sot-89-5 soic-8 1 4 8 vin input voltage 2 2 6, 7 gnd gnd 3 3 (r5) 5 en chip enable, h ? normal work, l ? shutdown output 1 (r5a) 4 adj/nc adjust output for adj version/no connection for fixed version 1 (r5) 2, 3, 4 nc no connection 3 (r5a) 5 5 1 vout output voltage
data sheet 600ma cmos ldo regulator with enable ap2112 mar. 2013 rev. 2. 0 bcd semiconductor manufacturing limited 3 functional block diagram figure 3. functional block diagram of ap2112 for fixed version figure 4. functional block diagram of ap2112 for adjustable version shutdown logic thermal shutdown foldback current limit v ref gnd en vout vin 3m 4(4){8}[1] 2(2){6,7}[2] 3(1){5}[3] 5(5){1}[5] shutdown logic thermal shutdown v ref gnd en vout vin 3m 3 2 1 5 foldback current limit adj/nc 4 a (b){c}[d] a: sot-89-5 (r5) b: sot-89-5 (r5a) c: soic-8 d: sot-23-5 sot-23-5
data sheet 600ma cmos ldo regulator with enable ap2112 mar. 2013 rev. 2. 0 bcd semiconductor manufacturing limited 4 ordering information ap2112 - g1: green circuit type package temperature range condition part number marking id packing type sot-23-5 -40 to 85 c 1.2v ap2112k-1.2trg1 g3l tape & reel 1.8v ap2112k-1.8trg1 g3m tape & reel 2.5v ap2112k-2.5trg1 g3n tape & reel 2.6v ap2112k-2.6trg1 g5n tape & reel 2.8v ap2112k-2.8trg1 g3q tape & reel 3.3v ap2112k-3.3trg1 g3p tape & reel adj ap2112k-adjtrg1 g3t tape & reel soic-8 -40 to 85 c 1.2v ap2112m-1.2g1 2112m-1.2g1 tube ap2112m-1.2trg1 2112m-1.2g1 tape & reel 1.8v ap2112m-1.8g1 2112m-1.8g1 tube ap2112m-1.8trg1 2112m-1.8g1 tape & reel 2.5v ap2112m-2.5g1 2112m-2.5g1 tube ap2112m-2.5trg1 2112m-2.5g1 tape & reel 2.6v ap2112m-2.6g1 2112m-2.6g1 tube ap2112m-2.6trg1 2112m-2.6g1 tape & reel 3.3v ap2112m-3.3g1 2112m-3.3g1 tube ap2112m-3.3trg1 2112m-3.3g1 tape & reel sot-89-5 -40 to 85 c 1.2v(r5) ap2112r5-1.2trg1 g37d tape & reel 1.8v(r5) ap2112r5-1.8trg1 g37e tape & reel 2.5v(r5) ap2112r5-2.5trg1 g37f tape & reel 2.6v(r5) ap2112r5-2.6trg1 g13f tape & reel 3.3v(r5) ap2112r5-3.3trg1 g37g tape & reel sot-89-5 -40 to 85 c 1.2v(r5a) ap2112r5a-1.2trg1 g33c tape & reel 1.8v(r5a) ap2112r5a-1.8trg1 g33e tape & reel 2.5v(r5a) ap2112r5a-2.5tr g1 g28g tape & reel 2.6v(r5a) ap2112r5a-2.6trg1 g13e tape & reel 3.3v(r5a) ap2112r5a-3.3tr g1 g28h tape & reel bcd semiconductor's pb-free products, as designated with "g1" suffix in the part number, are rohs compliant and green. blank: tube tr: tape & reel 1.2v: fixed output 1.2v 1.8v: fixed output 1.8v 2.5v: fixed output 2.5v 2.6v: fixed output 2.6v 2.8v: fixed output 2.8v 3.3v: fixed output 3.3v adj: adjustable output package k: sot-23-5 m: soic-8 r5/r5a: sot-89-5
data sheet 600ma cmos ldo regulator with enable ap2112 mar. 2013 rev. 2. 0 bcd semiconductor manufacturing limited 5 absolute maximum ratings (note 1) parameter symbol value unit power supply voltage v cc 6.5 v operating junction temperature range t j 150 oc storage temperature range t stg -65 to 150 oc lead temperature (soldering, 10 seconds) t lead 260 oc thermal resistance (junction to ambient)(no heatsink) ja sot-23-5 184 c /w soic-8 114 sot-89-5 120 esd (machine model) 400 v esd (human body model) 4000 v note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional op eration of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. recommended operating conditions parameter symbol min max unit supply voltage v in 2.5 6.0 v ambient operation temperature range t a -40 85 c
data sheet 600ma cmos ldo regulator with enable ap2112 mar. 2013 rev. 2. 0 bcd semiconductor manufacturing limited 6 electrical characteristics ap2112-1.2 electrical ch aracteristic (note 2) v in =2.5v, c in =1.0 f (ceramic), c out =1.0 f (ceramic), typical t a =25c, unless otherwis e specified (note 3). note 2: to prevent the short circuit current protectio n feature from being premat urely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25 c . over temperature specifications guaranteed by design only. parameter symbol test co nditions min typ max unit output voltage v out v in =2.5v, 1ma i out 30ma v out *98.5% 1.2 v out *101.5% v maximum output current i out(max) v in =2.5v, v out =1.182v to 1.218v 600 ma load regulation (v out /v out )/ i out v in =2.5v, 1ma i out 600ma -1 0.2 1 %/a line regulation (v out /v out )/ v in 2.5v v in 6v, i out =30ma -0.1 0.02 0.1 %/v dropout voltage v drop i out =10ma 1000 1300 mv i out =300ma 1000 1300 i out =600ma 1000 1300 quiescent current i q v in =2.5v, i out =0ma 55 80 a standby current i std v in =2.5v, v en in off mode 0.01 1.0 a power supply rejection ratio psrr ripple 0.5vp-p v in =2.5v, i out =100ma f=100hz 65 db f=1khz 65 output voltage temperature coefficient (v out /v out )/ t i out =30ma t a =-40c to 85c 100 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise n o load, 10hz f 100khz 50 v rms v en high voltage v ih enable logic high, regulator on 1.5 6.0 v v en low voltage v il enable logic low, regulator off 0 0.4 start-up time t s n o loa d 20 s en pull down resistor r pd 3.0 m v out discharge resistor r dchg set en pin at low 60 thermal shutdown temperature t otsd 160 c thermal shutdown hysteresis t hyotsd 25 thermal resistance jc sot-23-5 96 c/w soic-8 75 sot-89-5 47
data sheet 600ma cmos ldo regulator with enable ap2112 mar. 2013 rev. 2. 0 bcd semiconductor manufacturing limited 7 electrical characteristics (continued) ap2112-1.8 electrical ch aracteristic (note 2) v in =2.8v, c in =1.0 f (ceramic), c out =1.0 f (ceramic), typical t a =25c, unless otherwise specified (note 3). note 2: to prevent the short circuit current protectio n feature from being premat urely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25 c . over temperature specifications guaranteed by design only. parameter symbol test co nditions min typ max unit output voltage v out v in =2.8v, 1ma i out 30ma v out *98.5% 1.8 v out *101.5% v maximum output current i out(max) v in =2.8v, v out =1.773v to 1.827v 600 ma load regulation (v out /v out )/ i out v out =1.8v, v in =v out +1v, 1ma i out 600ma -1 0.2 1 %/a line regulation (v out /v out )/ v in 2.8v v in 6v, i out =30ma -0.1 0.02 0.1 %/v dropout voltage v drop i out =10ma 500 700 mv i out =300ma 500 700 i out =600ma 500 700 quiescent current i q v in =2.8v, i out =0ma 55 80 a standby current i std v in =2.8v, v en in off mode 0.01 1.0 a power supply rejectio n ratio psrr ripple 0.5vp-p v in =2.8v, i out =100ma f=100hz 65 db f=1khz 65 output voltage temperature coefficient (v out /v out )/ t i out =30ma t a =-40c to 85c 100 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise n o load, 10hz f 100khz 50 v rms v en high voltage v ih enable logic high, regulator on 1.5 6.0 v v en low voltage v il enable logic low, regulator off 0 0.4 start-up time t s n o loa d 20 s en pull down resistor r pd 3.0 m v out discharge resistor r dchg set en pin at low 60 thermal shutdown temperature t otsd 160 c thermal shutdown hysteresis t hyotsd 25 thermal resistance jc sot-23-5 96 c/w soic-8 75 sot-89-5 47
data sheet 600ma cmos ldo regulator with enable ap2112 mar. 2013 rev. 2. 0 bcd semiconductor manufacturing limited 8 electrical characteristics (continued) ap2112-2.5 electrical ch aracteristic (note 2) v in =3.5v, c in =1.0 f (ceramic), c out =1.0 f (ceramic), typical t a =25c, unless otherwise specified (note 3). note 2: to prevent the short circuit current protectio n feature from being premat urely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25 c . over temperature specifications guaranteed by design only. parameter symbol test co nditions min typ max unit output voltage v out v in =3.5v, 1ma i out 30ma v out *98.5% 2.5 v out *101.5% v maximum output current i out(max) v in =3.5v, v out =2.463v to 2.537v 600 ma load regulation (v out /v out )/ i out v out =2.5v, v in =v out +1v, 1ma i out 600ma -1 0.2 1 %/a line regulation (v out /v out )/ v in 3.5v v in 6v, i out =30ma -0.1 0.02 0.1 %/v dropout voltage v drop i out =10ma 5 8 mv i out =300ma 125 200 i out =600ma 250 400 quiescent current i q v in =3.5v, i out =0ma 55 80 a standby current i std v in =3.5v, v en in off mode 0.01 1.0 a power supply rejectio n ratio psrr ripple 0.5vp-p v in =3.5v, i out =100ma f=100hz 65 db f=1khz 65 output voltage temperature coefficient (v out /v out )/ t i out =30ma t a =-40c to 85c 100 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise n o load, 10hz f 100khz 50 v rms v en high voltage v ih enable logic high, regulator on 1.5 6.0 v v en low voltage v il enable logic low, regulator off 0 0.4 start-up time t s n o loa d 20 s en pull down resistor r pd 3.0 m v out discharge resistor r dchg set en pin at low 60 thermal shutdown temperature t otsd 160 c thermal shutdown hysteresis t hyotsd 25 thermal resistance jc sot-23-5 96 c/w soic-8 75 sot-89-5 47
data sheet 600ma cmos ldo regulator with enable ap2112 mar. 2013 rev. 2. 0 bcd semiconductor manufacturing limited 9 electrical characteristics (continued) ap2112-2.6 electrical ch aracteristic (note 2) v in =3.6v, c in =1.0 f (ceramic), c out =1.0 f (ceramic), typical t a =25c, unless otherwise specified (note 3). note 2: to prevent the short circuit current protectio n feature from being premat urely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25 c . over temperature specifications guaranteed by design only. parameter symbol test co nditions min typ max unit output voltage v out v in =3.6v, 1ma i out 30ma v out *98.5% 2.6 v out *101.5% v maximum output current i out(max) v in =3.6v, v out =2.561v to 2.639v 600 ma load regulation v out /v out )/ i out v out =2.6v, v in =v out +1v, 1ma i out 600ma -1 0.2 1 %/a line regulation (v out /v out )/ v in 3.6v v in 6v, i out =30ma -0.1 0.02 0.1 %/v dropout voltage v drop i out =10ma 5 8 mv i out =300ma 125 200 i out =600ma 250 400 quiescent current i q v in =3.6v, i out =0ma 55 80 a standby current i std v in =3.6v, v en in off mode 0.01 1.0 a power supply rejectio n ratio psrr ripple 0.5vp-p v in =3.6v, i out =100ma f=100hz 65 db f=1khz 65 output voltage temperature coefficient ( v out /v out )/ t i out =30ma t a =-40c to 85c 100 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise n o load, 10hz f 100khz 50 v rms v en high voltage v ih enable logic high, regulator on 1.5 6.0 v v en low voltage v il enable logic low, regulator off 0 0.4 start-up time t s n o loa d 20 s en pull down resistor r pd 3.0 m v out discharge resistor r dchg set en pin at low 60 thermal shutdown temperature t otsd 160 c thermal shutdown hysteresis t hyotsd 25 thermal resistance jc sot-23-5 96 c/w soic-8 75 sot-89-5 47
data sheet 600ma cmos ldo regulator with enable ap2112 mar. 2013 rev. 2. 0 bcd semiconductor manufacturing limited 10 electrical characteristics (continued) ap2112-2.8 electrical ch aracteristic (note 2) v in =3.8v, c in =1.0 f (ceramic), c out =1.0 f (ceramic), typical t a =25c, unless otherwise specified (note 3). note 2: to prevent the short circuit current protectio n feature from being premat urely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25 c . over temperature specifications guaranteed by design only. parameter symbol test co nditions min typ max unit output voltage v out v in =3.8v, 1ma i out 30ma v out *98.5% 2.8 v out *101.5% v maximum output current i out(max) v in =3.8v, v out =2.758v to 2.842v 600 ma load regulation (v out /v out )/ i out v out =2.8v, v in =v out +1v, 1ma i out 600ma -1 0.2 1 %/a line regulation (v out /v out )/ v in 3.8v v in 6v, i out =30ma -0.1 0.02 0.1 %/v dropout voltage v drop i out =10ma 5 8 mv i out =300ma 125 200 i out =600ma 250 400 quiescent current i q v in =3.8v, i out =0ma 55 80 a standby current i std v in =3.8v, v en in off mode 0.01 1.0 a power supply rejectio n ratio psrr ripple 0.5vp-p v in =3.8v, i out =100ma f=100hz 65 db f=1khz 65 output voltage temperature coefficient (v out /v out )/ t i out =30ma t a =-40c to 85c 100 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise n o load, 10hz f 100khz 50 v rms v en high voltage v ih enable logic high, regulator on 1.5 6.0 v v en low voltage v il enable logic low, regulator off 0 0.4 start-up time t s n o loa d 20 s en pull down resistor r pd 3.0 m v out discharge resistor r dchg set en pin at low 60 thermal shutdown temperature t otsd 160 c thermal shutdown hysteresis t hyotsd 25 thermal resistance jc sot-23-5 96 c/w soic-8 75 sot-89-5 47
data sheet 600ma cmos ldo regulator with enable ap2112 mar. 2013 rev. 2. 0 bcd semiconductor manufacturing limited 11 electrical characteristics (continued) ap2112-3.3 electrical ch aracteristic (note 2) v in =4.3v, c in =1.0 f (ceramic), c out =1.0 f (ceramic), typical t a =25c, unless otherwise specified (note 3). note 2: to prevent the short circuit current protectio n feature from being premat urely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25 c . over temperature specifications guaranteed by design only. parameter symbol test co nditions min typ max unit output voltage v out v in =4.3v, 1ma i out 30ma v out *98.5% 3.3 v out *101.5% v maximum output current i out(max) v in =4.3v, v out =3.251v to 3.350v 600 ma load regulation (v out /v out )/ i out v in =4.3v, 1ma i out 600ma -1 0.2 1 %/a line regulation (v out /v out )/ v in 4.3v v in 6v, i out =30ma -0.1 0.02 0.1 %/v dropout voltage v drop i out =10ma 5 8 mv i out =300ma 125 200 i out =600ma 250 400 quiescent current i q v in =4.3v, i out =0ma 55 80 a standby current i std v in =4.3v, v en in off mode 0.01 1.0 a power supply rejectio n ratio psrr ripple 0.5vp-p v in =4.3v, i out =100ma f=100hz 65 db f=1khz 65 output voltage temperature coefficient (v out /v out )/ t i out =30ma t a =-40c to 85c 100 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise n o load, 10hz f 100khz 50 v rms v en high voltage v ih enable logic high, regulator on 1.5 6.0 v v en low voltage v il enable logic low, regulator off 0 0.4 start-up time t s n o loa d 20 s en pull down resistor r pd 3.0 m v out discharge resistor r dchg set en pin at low 60 thermal shutdown temperature t otsd 160 c thermal shutdown hysteresis t hyotsd 25 thermal resistance jc sot-23-5 96 c/w soic-8 75 sot-89-5 47
data sheet 600ma cmos ldo regulator with enable ap2112 mar. 2013 rev. 2. 0 bcd semiconductor manufacturing limited 12 electrical characteristics (continued) ap2112-adj electrical char acteristic (note 2) v in =2.5v, c in =1.0 f (ceramic), c out =1.0 f (ceramic), typical t a =25c, unless otherwis e specified (note 3). note 2: to prevent the short circuit current protectio n feature from being premat urely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25c. over temperature specificatio ns guaranteed by design only. parameter symbol condi tions min typ max unit reference voltage v ref v in =2.5v, 1ma i out 30ma v ref 98.5% 0.8 v ref 101.5% v maximum output current i out(max) v in =2.5v, v ref =0.788v to 0.812v 600 ma load regulation (v out /v out )/ i out v in =2.5v, 1ma i out 600ma -1 0.2 1 %/a line regulation (v out /v out )/ v in 2.5v v in 6v, i out =30ma -0.1 0.02 0.1 %/v quiescent current i q v in =2.5v, i out =0ma 55 80 a standby current i std v in =2.5v, v en in off mode 0.01 1.0 a power supply rejection ratio psrr ripple 0.5vp-p v in =2.5v, i out =100ma f=100hz 65 db f=1khz 65 output voltage temperature coefficient (v out /v out )/ t i out =30ma t a =-40c to 85c 100 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise n o load, 10hz f 100khz 50 v rms ven high voltage v ih enable logic high, regulator on 1.5 6.0 v ven low voltage v il enable logic low, regulator off 0 0.4 start-up time t s n o loa d 20 s en pull down resistor r pd 3.0 m vout discharge resistor r dchg set en pin at low 60 thermal shutdown temperature t otsd 160 c thermal shutdown hysteresis t hyotsd 25 thermal resistance jc sot-23-5 96 c /w
data sheet 600ma cmos ldo regulator with enable ap2112 mar. 2013 rev. 2. 0 bcd semiconductor manufacturing limited 13 typical performance characteristics figure 5. output voltage vs. input voltage figure 6. output voltage vs. input voltage figure 7. quiescent current vs. temperature figure 8. quiescent current vs. input voltage 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 no load t a =-40 o c t a =25 o c t a =85 o c v out =1.2v output voltage (v) input voltage (v) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 output voltage (v) input voltage (v) t a =-40 o c t a =25 o c t a =85 o c v out =3.3v no load -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 46 48 50 52 54 56 58 60 62 64 66 68 70 v in =2.5v no load quiescent current ( a) temperature ( o c) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 10 20 30 40 50 60 70 quiescent current ( a) t a =-40 o c t a =25 o c t a =85 o c no load input voltage (v)
data sheet 600ma cmos ldo regulator with enable ap2112 mar. 2013 rev. 2. 0 bcd semiconductor manufacturing limited 14 typical performance characteristics (continued) figure 9. output voltage vs. temperature figure 10. output voltage vs. temperature figure 11. output voltage vs. output current figure 12. output voltage vs. output current 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v in =2.5v output voltage (v) output current (a) t a = -40 o c t a =25 o c t a =85 o c -40-20 0 20406080 3.25 3.26 3.27 3.28 3.29 3.30 3.31 3.32 3.33 3.34 3.35 output voltage (v) temperature( o c) i out =10ma i out =100ma i out =300ma i out =600ma v in =4.3v c in =1 f c out =1 f 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 output voltage (v) output current (a) t a =-40 o c t a = 25 o c t a = 85 o c v in =4.3v -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 1.200 1.202 1.204 1.206 1.208 1.210 i out =300ma i out =600ma i out =10ma i out =100ma v in =2.5v c in =1 f c out =1 f output voltage (v) temperature ( o c)
data sheet 600ma cmos ldo regulator with enable ap2112 mar. 2013 rev. 2. 0 bcd semiconductor manufacturing limited 15 typical performance characteristics (continued) figure 13. output voltage vs. output current figure 14. output voltage vs. output current figure 15. dropout voltage vs. output current figure 16. ground current vs. output current 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t a =25 o c c in =1 f c out =1 f v in =5v v in =2v v in =5.5v v in =6v v in =2.5v output voltage (v) output current (a) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 output voltage (v) output current (a) v in =4.0v v in =4.3v v in =5.0v v in =5.5v v in =6.0v t a =25 o c c in =1 f c out =1 f 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 50 100 150 200 250 300 350 dropout voltage (mv) output current (a) t a =-40 o c t a = 25 o c t a = 85 o c v out =3.3v 0.0 0.1 0.2 0.3 0.4 0.5 0.6 40 60 80 100 120 140 160 180 200 220 240 260 ground current ( a) output current (a) t a =-40 o c t a = 25 o c t a = 85 o c v in =4.3v
data sheet 600ma cmos ldo regulator with enable ap2112 mar. 2013 rev. 2. 0 bcd semiconductor manufacturing limited 16 typical performance characteristics (continued) figure 17. psrr vs. frequency figure 18. load transient figure 19. enable on figure 20. enable off 100 1k 10k 100k 30 35 40 45 50 55 60 65 70 i out =10ma i out =100ma i out =300ma v out =1.2v psrr (db) frequency (hz) 20 v in =2.5v ripple=0.5v 0m a v in =2.5v, c in =1 f, c out =1 f ch1: v out 10mv/di v ch2: i out 200m a / div 600m a v in (2v/div) v en (2v/div) v out (2v/div) 200 s/div v in (2v/div) v en (2v/div) v out (2v/div) 20 s/div
data sheet 600ma cmos ldo regulator with enable ap2112 mar. 2013 rev. 2. 0 bcd semiconductor manufacturing limited 17 typical application (note 4) note 4: it is recommended to use x7r or x5r dielectric capacitor if 1.0 f ceramic capacitor is selected as input/output capacitors. figure 21. ap2112 typical application
data sheet 600ma cmos ldo regulator with enable ap2112 mar. 2013 rev. 2. 0 bcd semiconductor manufacturing limited 18 mechanical dimensions sot-23-5 unit: mm(inch) 2.820(0.111) 2 . 6 5 0 ( 0 . 1 0 4 ) 1 . 5 0 0 ( 0 . 0 5 9 ) 0 . 0 0 0 ( 0 . 0 0 0 ) 0.300(0.012) 0.950(0.037) 0 . 9 0 0 ( 0 . 0 3 5 ) 0.100(0.004) 0.200(0.008) 0 . 3 0 0 ( 0 . 0 1 2 ) 8 0 3.100(0.122) 1 . 7 0 0 ( 0 . 0 6 7 ) 3 . 0 0 0 ( 0 . 1 1 8 ) 0.500(0.020) 0 . 1 5 0 ( 0 . 0 0 6 ) 1 . 3 0 0 ( 0 . 0 5 1 ) 0.200(0.008) 0 . 6 0 0 ( 0 . 0 2 4 ) 1.800(0.071) 2.000(0.079) 0 . 7 0 0 ( 0 . 0 2 8 ) r e f t y p 1 . 4 5 0 ( 0 . 0 5 7 ) m a x
data sheet 600ma cmos ldo regulator with enable ap2112 mar. 2013 rev. 2. 0 bcd semiconductor manufacturing limited 19 mechanical dimensions (continued) so t-89-5 unit: mm(inch) 45 1.030(0.041)ref 1.550(0.061)ref 4.400(0.173) 4.600(0.181) 0.900(0.035) 1.100(0.043) 3.950(0.156) 4.250(0.167) 3.000(0.118) typ 0.480(0.019) 2.300(0.091) 2.600(0.102) 0.320(0.013) 3 10 2.060(0.081)ref 0.350(0.014) 0.450(0.018) r0.150(0.006) 3 10 1.500(0.059) 0.320(0.013)ref 1.620(0.064)ref 2.210(0.087)ref 0.320(0.013) 1.800(0.071) option 1 1.100(0.043) 0.900(0.035) typ 0.540(0.021) 0.540(0.021) option 2 1.620(0.064) 1.830(0.072) r 0.200(0.008) 2.630(0.104) 2.930(0.115) 0.950(0.037) 0.650(0.026) 0.650(0.026) 0.950(0.037) 0.500(0.020) 0.620(0.024) 1.400(0.055) 1.600(0.063) option 1
data sheet 600ma cmos ldo regulator with enable ap2112 mar. 2013 rev. 2. 0 bcd semiconductor manufacturing limited 20 mechanical dimensions (continued) soic-8 unit: mm(inch) 0 8 1 7 r 0 . 1 5 0 ( 0 . 0 0 6 ) r0.150(0.006) 1.000(0. 039) 0.300(0. 012) 0.510(0. 020) 1.350(0. 053) 1.750(0. 069) 0.100(0. 004) 0.300(0. 012) 0.900(0. 035) 3.800(0. 150) 4.000(0. 157) 7 7 2 0 : 1 d 1.270(0. 050) typ 0.150(0. 006) 0.250(0. 010) 8 d 5.800(0. 228) 6.200(0. 244) 0.675(0. 027) 0.725(0. 029) 0.320(0. 013) 8 0.450(0. 017) 0.800(0. 031) 4.700(0.185) 5.100(0. 201) note: eject hole , oriented hole and mold mark is optional . option 1 option 1 option 2 0.350(0. 014) typ typ typ typ
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yishan road, shanghai 200233, china tel: +021-6485-1491, fa x: +86-021-5450-0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manu facturing co., ltd., shenzhen office unit a room 1203,skyworth bldg., gaoxin ave.1.s., nanshan district shenzhen 518057, china tel: +86-0755-8660-4900, fax: +86-0755-8660-4958 taiwan office (taipei) bcd semiconductor (taiwan) company limited 3f, no.17, lane 171, sec. 2, jiu-zong rd., ne i-hu dist., taipei(114), taiwan, r.o.c tel: +886-2-2656 2808 fax: +886-2-2656-2806/26562950 taiwan office (hsinchu) bcd semiconductor (taiwan) company limited 8f, no.176, sec. 2, gong-dao 5th road, east district hsinchu city 300, taiwan, r.o.c tel: +886-3-5160181, fax: +886-3-5160181 - headquarters bcd (shanghai) micro-electronics limited no. 1600, zi xing road, shanghai zizhu scie nce-based industrial park, 200241, p. r.c. tel: +86-021-2416-2266, fax: +86-021-2416-2277 usa office bcd semiconductor corp. 48460 kato road, fremont, ca 94538, usa tel: +1-510-668-1950 fax: +1-510-668-1990 korea office bcd semiconductor limited korea office. room 101-1112, digital-empire ii, 486 sin-dong, yeongtong-gu, suwon-city, gyeonggi-do, korea tel: +82-31-695-8430 important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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